SemiMOS SM1N60
600V N-Channel MOSFET
| Part No. | SM1N60 |
|---|---|
| Datasheet | SM1N60 Download |
| Manufacturer | SemiMOS |
| Description | 600V N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
: □ Low Intrinsic Capacitances. □ Excellent Switching Characteristics. □ Extended Safe Operating Area. □ Unrivalled Gate Charge :Qg=7.7nC (Typ.). □ BVDSS=600V,ID=1A □ RDS(on) : 8Ω (Max) @VG=10V □ 100% Avalanche TestedABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation EAS IAR EAR TSTG TJ Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter 1 2 3 1.Gate (G) 2.Drain (D) 3.Source (S) Marking:SYM601 Rating 600 ±30 1.0 0.7 6 26 0.21 13 1.0 0.5 -55 to 150 -55 to 150 Units V V A A A W W/℃ mJ A mJ ℃ ℃ Value Units Rthj-c Thermal Resistance Junction-case Max. 4.7 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W 1 SM1N60 600V N-Channel MOSFETELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
