SM1N60
SM1N60 is 600V N-Channel MOSFET manufactured by SemiMOS.
Features
:
- Low Intrinsic Capacitances.
- Excellent Switching Characteristics.
- Extended Safe Operating Area.
- Unrivalled Gate Charge :Qg=7.7n C (Typ.).
- BVDSS=600V,ID=1A
- RDS(on) : 8Ω (Max) @VG=10V
- 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation
EAS IAR EAR TSTG TJ
Linear Derating Factor Single Pulse Avalanche Energy2 Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
1 2 3
1.Gate (G) 2.Drain (D) 3.Source (S)
Marking:SYM601
Rating 600 ±30 1.0 0.7 6 26 0.21 13 1.0 0.5
-55 to 150 -55 to 150
Units V V A A A W
W/℃ m J A m J ℃ ℃
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
℃/W
600V N-Channel MOSFET
Electrical Characteristics@Tj=25o C(unless otherwise...
