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SM2N60S-D - 600V N-Channel MOSFET

Download the SM2N60S-D datasheet PDF. This datasheet also covers the SM2N60S-I variant, as both devices belong to the same 600v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low Intrinsic Capacitances.
  • Excellent Switching Characteristics.
  • Extended Safe Operating Area.
  • Unrivalled Gate Charge :Qg=8.5nC (Typ. ).
  • BVDSS=600V,ID=2A.
  • RDS(on) : 4.5 Ω (Max) @VG=10V.
  • 100% Avalanche Tested TO‐252 TO‐251 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol VDSS ID VGS(TH) EAS IAR PD Tj Tstg TL Parameter Drain-Source Voltage Drain Current Gate Threshold Voltag.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SM2N60S-I-SemiMOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SM2N60S-D
Manufacturer SemiMOS
File Size 695.46 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet SM2N60S-D Datasheet

Other Datasheets by SemiMOS

Part Number Description
SM2N60S-I 600V N-Channel MOSFET
SM2N60S 600V N-Channel MOSFET
SM20N06 60V N-Channel MOSFET
SM20N50 500V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SM2N60S-I/SM2N60S-D 600V N-Channel MOSFET SM2N60S-I/SM2N60S-D KONGSON Features: □ Low Intrinsic Capacitances. □ Excellent Switching Characteristics. □ Extended Safe Operating Area. □ Unrivalled Gate Charge :Qg=8.5nC (Typ.). □ BVDSS=600V,ID=2A □ RDS(on) : 4.5 Ω (Max) @VG=10V □ 100% Avalanche Tested TO‐252 TO‐251 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol VDSS ID VGS(TH) EAS IAR PD Tj Tstg TL Parameter Drain-Source Voltage Drain Current Gate Threshold Voltage Tj=25℃ Tj=100℃ Single Pulse Avalanche Energy (note1) Avalanche Current (note2) Power Dissipation (Tj=25℃) Junction Temperature(Max) Storage Temperature Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds Value 600 2 1.