SM2N60S-I Overview
SM2N60S-I/SM2N60S-D 600V N-Channel MOSFET SM2N60S-I/SM2N60S-D KONGSON.
SM2N60S-I Key Features
- Low Intrinsic Capacitances
- Excellent Switching Characteristics
- Extended Safe Operating Area
- Unrivalled Gate Charge :Qg=8.5nC (Typ.)
- BVDSS=600V,ID=2A
- RDS(on) : 4.5 Ω (Max) @VG=10V
- 100% Avalanche Tested