SM2N60S Key Features
- Low Intrinsic Capacitances
- Excellent Switching Characteristics
- Extended Safe Operating Area
- Unrivalled Gate Charge :Qg=6.8nC (Typ.)
- BVDSS=600V,ID=2A
- RDS(on) : 4.5Ω (Max) @VG=10V
- 100% Avalanche Tested
| Part Number | Description |
|---|---|
| SM2N60S-D | 600V N-Channel MOSFET |
| SM2N60S-I | 600V N-Channel MOSFET |
| SM20N06 | 60V N-Channel MOSFET |
| SM20N50 | 500V N-Channel MOSFET |