SEMiX106GD12T4p
SEMiX106GD12T4p is IGBT manufactured by Semikron Danfoss.
Features
-
- Press Fit
- Homogeneous Si
- Trench = Trenchgate technology
- VCE(sat) with positive temperature coefficient
- High short circuit capability
- UL recognised file no. E63532
Typical Applications
- AC inverter drives
- UPS
- Electronic Welding
Remarks
- Case temperature limited to TC=125°C max.
- Visol between temperature sensor and power section is only 2500V
- Product reliability results valid for Tj ≤ 150°C (remended Tjop= -40 ... 150°C)
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom ICRM VGES tpsc
Tj
ICRM = 3 x ICnom VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V
Tj = 150 °C
Inverse diode
VRRM IF
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom IFRM IFSM Tj
IFRM = 2x IFnom tp = 10 ms, sin 180°, Tj = 25 °C
Module
It(RMS) Tstg Visol per connector pin AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0 r CE
VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off)...
