SKiM601MLI07E4 Datasheet | Semikron Danfoss

Features - IGBT 4 Trench Gate Technology - Solder technology - VCE(sat) with positive temperature coefficient - Low inductance case - Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate - Pressure contact technology for thermal contacts - Spring contact system to attach driver PCB to the control terminals - High short circuit capability, self limiting to 6 x IC - Integrated temperature sensor Typical Applications- - UPS - 3 Level Inverter Remarks - Case temperature limited to Tc = 125°C max, remended Top = -40 … +150°C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM ICRM = 2x ICnom VGES tpsc Tj VCC = 360 V VGE ≤ 15 V VCES ≤ 650 V Tj = 150 °C Inverse diode Tj = 175 °C Ts = 25 °C Ts = 70 °C IFnom IFRM IFRM = 2x IFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Clamping...