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SKiM601TMLI12E4B - IGBT

Features

  • IGBT 4 Trench Gate Technology.
  • Solder technology.
  • VCE(sat) with positive temperature coefficient.
  • Low inductance case.
  • Insulated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate.
  • Pressure contact technology for thermal contacts.
  • Spring contact system to attach driver PCB to the control terminals.
  • High short circuit capability, self limiting to 6 x IC.
  • Integrated temperature sensor Remarks.
  • Case t.

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Full PDF Text Transcription

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SKiM601TMLI12E4B SKiM® 4 Trench IGBT Modules SKiM601TMLI12E4B Features • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Insulated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Remarks* • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Top = -40 ...
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