MMBTA06 Datasheet | Semiware Semiconductor

FEATURES For Switching and Amplifier Applications plementary to MMBTA56 Power Dissipation of 300m W High Stability and High Reliability MECHANICAL DATA SOT-23 small outline plastic package Epoxy UL: 94V-0 Mounting position: Any APPROVALS Ro HS pliance with 2011/65/EU HF pliance with IEC61249-2-21:2003 MAXIMUM RATINGS (TA=25°C ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ TSTG Plastic-Encapsulate Transistor (NPN) 3 1 2 SOT-23 1GM Marking C (3) (1) B E (2) Schematic Symbol Value 80 80 4 500 300 416 150 -55~+150 Unit V m A m W ℃/W ℃ ℃ Product Datasheet Rev. A2.0 1/6 Build Your Design As You Will Http://semiware. Plastic-Encapsulate Transistor (NPN) ELECTRICAL CHARACTERISTICS (TA=25°C) Parameter Symbol Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current V(BR)CBO V(BR)CEO V(BR)EBO ICEO ICBO Emitter cut-off current DC current gain IEBO h FE(1)- h FE(2)- Collector-emitter saturation voltage VCE(sat)- Base-emitter saturation voltage VBE(sat)-...