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STP2305 - P-Channel Enhancement Mode MOSFET

General Description

-30V P-Channel Enhancement Mode MOSFET

The STP2305 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density.

advanced trench technology to provide excellent RDS(ON).

.low gate charge and operation gate as 2.5V.

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Datasheet Details

Part number STP2305
Manufacturer Semtron
File Size 371.63 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet STP2305 Datasheet

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P-Channel Enhancement Mode MOSFET STP2305 ■DESCRIPTION -30V P-Channel Enhancement Mode MOSFET ■FEATURE The STP2305 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). .low gate charge and operation gate as 2.5V. This device is suitable for use as a load switch or other general applications.  -30V/-4.3A, RDS(ON) =55mΩ(typ.)@VGS =-10V  -30V/-3.5A, RDS(ON) =65mΩ(typ.)@VGS =-4.5V  -30V/-2.5A, RDS(ON) =87mΩ(typ.)@VGS =-2.