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STP2305A - -20V P-Channel Enhancement Mode MOSFET

General Description

The STP2305A is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density.

advanced trench technology to provide excellent RDS(ON).

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number STP2305A
Manufacturer Semtron
File Size 157.48 KB
Description -20V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet STP2305A Datasheet

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P-Channel Enhancement Mode MOSFET STP2305A -20V P-Channel Enhancement Mode MOSFET ■DESCRIPTION ■FEATURE The STP2305A is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , and low in-line power loss are needed in a very small outline surface mount package. ‹ -16V/-3.5A, RDS(ON)= 63mΩ@VGS = -10V ‹ -16V/-3.0A, RDS(ON)= 80mΩ@VGS = -4.5V ‹ -16V/-2.2A, RDS(ON)= 90mΩ@VGS = -2.