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LH28F004SU-NC - 4M (512K bb 8) Flash Memory

General Description

SYMBOL TYPE NAME AND FUNCTION WORD-SELECT ADDRESSES: Select a word within one 16K block.

These addresses are latched during Data Writes.

BLOCK-SELECT ADDRESSES: Select 1 of 32 Erase blocks.

Key Features

  • 40-PIN TSOP 4M (512K × 8) Flash Memory TOP VIEW.
  • 512K × 8 Word Configuration.
  • 5 V Write/Erase Operation (5 V VPP).
  • No Requirement for DC/DC Converter to Write/Erase A16 A15 A14 A13 A12 A11 A9 A8 WE RP VPP RY/BY A18 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 A17 GND NC NC A10 DQ7 DQ6 DQ5 DQ4 VCC VCC NC DQ3 DQ2 DQ1 DQ0 OE GND CE A0.
  • 80 n.

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Other Datasheets by Sharp Corporation

Part Number Description
LH28F004SU-LC 4M (512K bb 8) Flash Memory
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LH28F004SU-NC FEATURES 40-PIN TSOP 4M (512K × 8) Flash Memory TOP VIEW • 512K × 8 Word Configuration • 5 V Write/Erase Operation (5 V VPP) – No Requirement for DC/DC Converter to Write/Erase A16 A15 A14 A13 A12 A11 A9 A8 WE RP VPP RY/BY A18 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 A17 GND NC NC A10 DQ7 DQ6 DQ5 DQ4 VCC VCC NC DQ3 DQ2 DQ1 DQ0 OE GND CE A0 • • • • 80 ns Maximum Access Time 32 Independently Lockable Blocks (16K) 100,000 Erase Cycles per Block Automated Byte Write/Block Interface – Command User Interface – Status Register » BY  » Status Output – RY  / – Erase Suspend for Read – Two-Byte Write – Full Chip Erase • System Performance Enhancement • Data Protection – Hardware Erase/W