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LH28F004SU-Z9 - 4M (512 bb 8) Flash Memory

Datasheet Summary

Description

SYMBOL TYPE NAME AND FUNCTION WORD-SELECT ADDRESSES: Select a word within one 16K block.

These addresses are latched during Data Writes.

BLOCK-SELECT ADDRESSES: Select 1 of 32 Erase blocks.

Features

  • 42-PIN CSP 4M (512 × 8) Flash Memory TOP VIEW.
  • 512K × 8 Word Configuration.
  • 2.7 V Write/Erase Operation (5 V ± 0.5 V VPP, 3.0 V ± 0.3 V VCC, +15°C to +35°C).
  • No Requirement For DC/DC Converter To Write/Erase 1 A GND B C D E F A17 A10 A14 A16 A15 2 DQ6 DQ7 NC A13 A11 A12 3 VCC DQ4 DQ5 A9 WE A8 4 VCC NC NC NC RP VPP 5 DQ2 NC DQ3 RY/BY A7 A18 6 OE DQ0 DQ1 A6 A4 A5 7 GND CE A0 A3 A1 A2.
  • 150 ns Maximum Access Time (VCC = 3.3 V ± 0.3 V).
  • Minimum.

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Datasheet Details

Part number LH28F004SU-Z9
Manufacturer Sharp Electrionic Components
File Size 188.26 KB
Description 4M (512 bb 8) Flash Memory
Datasheet download datasheet LH28F004SU-Z9 Datasheet
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LH28F004SU-Z9 FEATURES 42-PIN CSP 4M (512 × 8) Flash Memory TOP VIEW • 512K × 8 Word Configuration • 2.7 V Write/Erase Operation (5 V ± 0.5 V VPP, 3.0 V ± 0.3 V VCC, +15°C to +35°C) – No Requirement For DC/DC Converter To Write/Erase 1 A GND B C D E F A17 A10 A14 A16 A15 2 DQ6 DQ7 NC A13 A11 A12 3 VCC DQ4 DQ5 A9 WE A8 4 VCC NC NC NC RP VPP 5 DQ2 NC DQ3 RY/BY A7 A18 6 OE DQ0 DQ1 A6 A4 A5 7 GND CE A0 A3 A1 A2 • 150 ns Maximum Access Time (VCC = 3.3 V ± 0.3 V) • Minimum 2.7 V Read Capability – 190 ns Maximum Access Time (VCC = 2.7 V, -20°C to +85°C) – 180 ns Maximum Access Time (VCC = 2.
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