LH28F004SU-Z1 Datasheet PDF - Sharp Electrionic Components 4M (512K bb 8) Flash Memory Specs

LH28F004SU-Z1 - 4M (512K bb 8) Flash Memory

Datasheet Summary

Description

SYMBOL TYPE NAME AND FUNCTION WORD-SELECT ADDRESSES: Select a word within one 16K block.

These addresses are latched during Data Writes.

BLOCK-SELECT ADDRESSES: Select 1 of 32 Erase blocks.

Features

40-PIN TSOP 4M (512K × 8) Flash Memory TOP VIEW.
512K × 8 Word Configuration.
5 V Write/Erase Operation (5 V VPP).
No Requirement for DC/DC Converter to Write/Erase A16 A15 A14 A13 A12 A11 A9 A8 WE RP VPP RY/BY A18 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 A17 GND NC NC A10 DQ7 DQ6 DQ5 DQ4 VCC VCC NC DQ3 DQ2 DQ1 DQ0 OE GND CE A0.
100.

Datasheet Details

Part number	LH28F004SU-Z1
Manufacturer	Sharp Electrionic Components
File Size	182.84 KB
Description	4M (512K bb 8) Flash Memory
Datasheet	LH28F004SU-Z1 Datasheet
Additional preview pages of the LH28F004SU-Z1 datasheet.

📁 Similar Datasheet

LH28F008BJT-BTLZC - Flash Memory 8M (1Mb x 8) (Sharp Microelectronics)

LH28F008SA - 8M (1M x 8) Flash Memory (Sharp)

LH28F008SAHR-85 - 8 MBIT(1 MBIT x 8)FLASH MEMORY (Sharp)

LH28F008SAR-85 - 8M Flash Memory 1M (x8) (Sharp)

LH28F008SAT-K85 - 8 MBIT(1 MBIT x 8) FLASH MEMORY (Sharp)

LH28F008SC - 8M (1M x 8) Flash Memory (Sharp)

LH28F008SCH-L - 8-MBIT(1 MB x 8) SmartVoltage Flash MEMORY (Sharp)

LH28F008SCHT-85 - 8-MBIT(1 MB x 8) SmartVoltage Flash MEMORY (Sharp)

LH28F008SCHT-TE - Flash Memory 8M (1Mb x 8) (Sharp Microelectronics)

LH28F008SCR-L85 - Flash Memory (Sharp)

Full PDF Text Transcription

Click to expand full text

LH28F004SU-Z1 FEATURES 40-PIN TSOP 4M (512K × 8) Flash Memory TOP VIEW • 512K × 8 Word Configuration • 5 V Write/Erase Operation (5 V VPP) – No Requirement for DC/DC Converter to Write/Erase A16 A15 A14 A13 A12 A11 A9 A8 WE RP VPP RY/BY A18 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 A17 GND NC NC A10 DQ7 DQ6 DQ5 DQ4 VCC VCC NC DQ3 DQ2 DQ1 DQ0 OE GND CE A0 • • • • 100 ns Maximum Access Time 32 Independently Lockable Blocks (16K) 100,000 Erase Cycles per Block Automated Byte Write/Block Erase – Command User Interface – Status Register » BY » Status Output – RY / – Erase Suspend for Read – Two-Byte Write – Full Chip Erase • System Performance Enhancement • Data Protection – Hardware Erase/Writ

Published: Mar 22, 2005 |