SE1000W Datasheet | SiGe Semiconductor Inc.

Light Charger TM155 Mb/s Transimpedance Amplifier Final Applications - - - SONET/SDH-based transmission systems, test equipment and modules OC-3 fibre optic modules and line termination ATM and FDDI optical receivers Product Description Si Ge Semiconductor offers a portfolio of optical networking ICs for use in high-performance optical transmitter and receiver functions, from 155 Mb/s up to 12.5 Gb/s. Si Ge Semiconductor’s SE1000W is a fully integrated, silicon bipolar transimpedance amplifier; providing wideband, low noise preamplification of signal current from a photodetector. It Features single-ended or differential outputs, selectable by wire bond options, and incorporates an automatic gain control mechanism to increase dynamic range, allowing input signals up to 2.6 m A peak. For differential outputs, a decoupling capacitor on the supply is the only external circuitry required. Noise performance is optimized for 155 Mb/s operation, with a calculated rms noise based -10 sensitivity of - 41 d Bm for 10 bit error rate, achieved using a detector with 0.5 p F capacitance and a responsivity of 0.95 A/W, with an infinite extinction ratio source. Features - - - - Single +5 V power supply Input noise current = 12 n A rms when used with a 0.5 p F detector Transimpedance gain = 15 kΩ into a 50 Ω load (single-ended) On-chip automatic gain control gives input current overload of 2.6 m A pk and max output voltage swing of 300 m V pk-pk 50 Ω single-ended or 100 Ω differential wire bond selectable outputs Bandwidth (-3 d B) = 150 MHz (min) Wide data rate range = 10 Mb/s to 155 Mb/s High input bias level = 2 V Minimal external ponents, supply decoupling only Operating junction temperature range = -40°C to +95°C Equivalent to Nortel Networks AB52 - - - - - - - Ordering Information Type SE1000W Package Bare Die Remark Shipped in Waffle Pack Functional Block Diagram SE1000 Tz Amp 155 Mb/s Automatic Gain Control Integrator Rectifier Rf TZ_IN Input Current Tz Amp Output...