SE1020W Datasheet | SiGe Semiconductor Inc.

1.25 Gb/s Transimpedance Amplifier Product Preview Applications Gigabit-Ethernet systems, test equipment and modules OC-24 fibre optic modules and line termination Fibre Channel optical systems Product Description Si Ge Semiconductor offers a portfolio of optical networking ICs for use in high-performance optical transmitter and receiver functions, from 155 Mb/s up to 12.5 Gb/s. Si Ge Semiconductor’s SE1020W is a fully integrated, silicon bipolar transimpedance amplifier; providing wideband, low noise preamplification of signal current from a photodetector. It Features differential outputs and incorporates an automatic gain control mechanism to increase dynamic range, allowing input signals up to 2.6 m A peak. A decoupling capacitor on the supply is the only external circuitry required. A system block diagram is shown after the functional description, on page 3. Features Single +3.3 V power supply Power dissipation = 110 m W (typ) Input noise current = 180 n A rms when used with a 0.7 p F detector Transimpedance gain = 4.0 kΩ into a 50 Ω load (differential) On-chip automatic gain control gives input current overload of 2.6 m A pk and max output voltage swing of 300 m V pk-pk Differential 50 Ω outputs Bandwidth (-3 d B) = 1.2 GHz Wide data rate range = 50 Mb/s to 1.25 Gb/s Constant photodiode reverse bias voltage = 1.5 V (anode to input, cathode to VCC) Minimal external ponents, supply decoupling only Operating junction temperature range = -40°C to +125°C Ordering Information Type SE1020W Package Bare Die Remark None Functional Block Diagram SE1020 Tz Amp 1.25 Gb/s Automatic Gain Control Integrator Rectifier VCC or +ve supply Input Current TZ_IN Rf 50 Ω Tz Amp Output Driver OUTP OUTN 50 Ω Bandgap Reference 42-DST-01 Rev 1.3 May 27/02 Confidential 1 of 7 1.25 Gb/s Transimpedance Amplifier Product Preview Bondpad...