SE1031W Datasheet | SiGe Semiconductor Inc.

Light Charger™ 2.5 Gb/s Transimpedance Amplifier LP Final Applications - - - - - SONET/SDH-based transmission systems, test equipment and modules OC-48 fibre optic modules and line termination ATM over SONET/SDH Gigabit Ethernet Fibre Channel Product Description Si Ge Semiconductor offers a portfolio of optical networking ICs for use in high-performance optical transmitter and receiver functions, from 155 Mb/s up to 12.5 Gb/s. Si Ge Semiconductor’s SE1031 is a fully integrated, silicon bipolar transimpedance amplifier; providing wideband, low noise preamplification of signal current from a photodetector. It Features differential outputs, and incorporates an automatic gain control mechanism to increase dynamic range, allowing input signals up to 2.6 m A peak. A decoupling capacitor on the supply is the only external circuitry required. A system block diagram is shown after the functional description, on page 3. Noise performance is optimized for 2.5 Gb/s operation, with a calculated rms noise based -10 sensitivity of - 26 d Bm for 10 bit error rate, achieved using a detector with 0.5 p F capacitance and a responsivity of 0.9 A/W, with an infinite extinction ratio source. Features - - - - - Single +3.3 V power supply Power dissipation = 110 m W (typ) Input nois e current = 360 n A rms when used with a 0.5 p F detector Transimpedance gain = 2.3 kΩ into a 50 Ω load (differential) On-chip automatic gain control gives input current overload of 2.6 m A pk and max output voltage swing of 300 m V pk-pk Differential 50 Ω outputs Bandwidth (-3 d B) = 2.4 GHz Wide data rate range = 50 Mb/s to 2.5 Gb/s Constant photodiode reverse bias voltage = 1.5 V (anode to input, cathode to VCC) Minimal external ponents, supply decoupling only Operating junction temperature range = -40°C to +125°C Equivalent to Nortel Networks AB89-A4A - - - - - - - Ordering Information Type SE1031W Package Bare Die Remark None Functional Block Diagram SE1031 Tz Amp 2.5 Gb/s Automatic Gain...