BBY51 Description
+ 150 Unit V mA °C VR IF Top Tstg Semiconductor Group 1 Jan-09-1997 BBY 51 at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ.
BBY51 is Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) manufactured by Siemens Group.
| Manufacturer | Part Number | Description |
|---|---|---|
Infineon |
BBY51 | Silicon Tuning Diode |
Infineon |
BBY51-02L | Silicon Tuning Diode |
Infineon |
BBY51-02V | Silicon Tuning Diode |
Infineon |
BBY51-02W | Silicon Tuning Diode |
Infineon |
BBY51-03W | Silicon Tuning Diode |
+ 150 Unit V mA °C VR IF Top Tstg Semiconductor Group 1 Jan-09-1997 BBY 51 at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ.