BBY51
BBY 51 Silicon Tuning Diode
- High Q hyperabrupt dual tuning diode
- Designed for low tuning voltage operation
- For VCO's in mobile munications equipment
Type BBY 51
Marking Ordering Code S3 Q62702-B631
Pin Configuration 1=A 2=A
Package 3 = C1/C2 SOT-23
Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 7 20
- 55 ... + 150
- 55 ... + 150 Unit V m A °C
VR IF Top Tstg
Semiconductor Group
Jan-09-1997
BBY 51
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit
10 200 n A
VR = 6 V, TA = 25 °C VR = 6 V, TA = 65 °C
AC Characteristics Diode capacitance
4.5 3.4 2.7 2.5 5.3 4.2 3.5 3.1 1.75 1.78 0.5 0.37 0.12 2 6.1 5.2 4.6 3.7 p F
VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz
Capacitance ratio
CT1/CT4
1.55 2.2 p F 1.4 2.2 0.7 Ω p F n H
- VR = 1 V, VR = 4 V, f = 1...
