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BBY 51 Silicon Tuning Diode
• High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment
Type BBY 51
Marking Ordering Code S3 Q62702-B631
Pin Configuration 1=A 2=A
Package 3 = C1/C2 SOT-23
Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 7 20 - 55 ... + 150 - 55 ... + 150 Unit V mA °C
VR IF Top Tstg
Semiconductor Group
1
Jan-09-1997
BBY 51
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit
IR
10 200
nA
VR = 6 V, TA = 25 °C VR = 6 V, TA = 65 °C
AC Characteristics Diode capacitance
CT
4.5 3.4 2.7 2.5 5.3 4.2 3.5 3.1 1.75 1.78 0.5 0.37 0.
BBY51 Datasheet
