BBY53
BBY 53 Silicon Tuning Diode
Preliminary data
- High Q hyperabrupt tuning diode
- Designed for low tuning voltage operation for VCO's in mobile munications equipment
- High ratio at low reverse voltage
Type BBY 53
Marking Ordering Code S7s Q62702-B824
Pin Configuration 1 = A1 2 = A2
Package 3 = C1/C2 SOT-23
Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 6 20
- 55 ... + 150
- 55 ... + 150 Unit V m A °C
VR IF Top Tstg
Semiconductor Group
Feb-04-1997
BBY 53
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit
10 200 n A
VR = 4 V, TA = 25 °C VR = 4 V, TA = 65 °C
AC characteristics Diode capacitance
4.8 1.85 5.3 2.4 2.2 0.37 0.12 2 5.8 3.1 p F
VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz
Capacitance ratio
CT1/CT3
1.8 2.6
Ω p F n H
- VR = 1 V, VR = 3 V, f = 1 MHz
Series resistance rs CC Ls
VR = 1 V, f...
