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BBY 53 Silicon Tuning Diode
Preliminary data
• High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage
Type BBY 53
Marking Ordering Code S7s Q62702-B824
Pin Configuration 1 = A1 2 = A2
Package 3 = C1/C2 SOT-23
Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 6 20 - 55 ... + 150 - 55 ... + 150 Unit V mA °C
VR IF Top Tstg
Semiconductor Group
1
Feb-04-1997
BBY 53
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit
IR
10 200
nA
VR = 4 V, TA = 25 °C VR = 4 V, TA = 65 °C
AC characteristics Diode capacitance
CT
4.
BBY53 Datasheet
