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BBY52 - Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation)

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Part number BBY52
Manufacturer Siemens Group
File Size 31.66 KB
Description Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation)
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BBY 52 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type BBY 52 Marking Ordering Code S5s Q62702-B599 Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT-23 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 7 20 - 55 ... + 150 - 55 ... + 150 Unit V mA °C VR IF Top Tstg Semiconductor Group 1 Jul-04-1996 BBY 52 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 10 200 nA VR = 6 V, TA = 25 °C VR = 6 V, TA = 65 °C AC characteristics Diode capacitance CT 1.4 0.85 1.85 1.5 1.35 1.15 1.6 0.9 0.12 2 2.2 1.
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