BBY52 Description
+ 150 Unit V mA °C VR IF Top Tstg Semiconductor Group 1 Jul-04-1996 BBY 52 at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ.
BBY52 is Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) manufactured by Siemens Group.
| Manufacturer | Part Number | Description |
|---|---|---|
Infineon |
BBY52 | Silicon Tuning Diodes |
Infineon |
BBY52-02L | Silicon Tuning Diodes |
Infineon |
BBY52-02W | Silicon Tuning Diodes |
+ 150 Unit V mA °C VR IF Top Tstg Semiconductor Group 1 Jul-04-1996 BBY 52 at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ.