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LD274 - GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

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Datasheet Details

Part number LD274
Manufacturer Siemens Group
File Size 34.63 KB
Description GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
Datasheet download datasheet LD274 Datasheet

General Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, tp = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Kennwerte (TA

Overview

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 274 Area not flat 0.6 0.4 2.54 mm spacing 0.8 0.4 9.0 8.2 7.8 7.5 ø5.1 ø4.8 5.9 5.5 Approx.

weight 0.5 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Key Features

  • q Extremely narrow half angle q GaAs infrared emitting diode, fabricated in a q q q q Schmelzepitaxieverfahren Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit Gruppiert lieferbar Gehäusegleich mit SFH 484 liquid phase epitaxy process High reliability High pulse handling capability Available in groups Same package as SFH 484 Anwendungen q IR-Fernsteuerung von Fernseh- und.

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