BAR64-03 Datasheet | Siemens Semiconductor Group

BAR 64-03W Silicon PIN Diode l High voltage current controlled RF resistor for RF attenuator and swirches l Freqency range above 1 MHz l Low resistance and short carrier lifetime l For frequencies up to 3 GHz Type BAR 64-03W Marking 2 Ordering Code (tape and reel) Q62702-A1045 Pin Configuration Package 1 2 C A SOD-323 1) Maximum Ratings per Diode Parameter Reverse voltage Forward current Total Power dissipation TS ≤ 25°C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-ambient 1) Symbol BAR 64-03W 200 100 250 150 -55 +150°C -55...+150°C Unit V m A m W °C °C °C VR IF Ptot Tj Top Tstg Rth JA ≤ 450 K/W 1)Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Edition A01, 22.07.94 BAR 64-03W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. Value typ. max. Unit DC Characteristics per Diode Breakdown voltage IR = 5 µA Forward voltage IF = 50 m A Diode capacitance VR = 20 V, f = 1 MHz Forward resistance IF = 1 m A, f = 100 MHz IF = 10 m A, f = 100 MHz IF = 100 m A, f = 100 MHz Charge carrier lifetime IF = 10 m A, IR = 6 m A, IR = 3 m A Series inductance V(BR) 200 0.23 12.5 2.1 0.85 1.55 2.0 - V V 1.1 p F 0.35 Ω -20 3.8 1.35 µs n H - VF CT rf τL Ls Semiconductor Group Edition A01, 22.07.94 BAR 64-03W Forward resistance rf= f (IF) f = 100 MHz Diode capacitance CT= f (VR) f = 1 MHz. Forward current IF = f (VF) Semiconductor Group Edition A01,...