BAR64-03W Datasheet | Infineon

description This Infineon cost optimized RF PIN diode is designed for low distortion switches that require to hold off large RF voltages, and is best suited for frequencies as high as 3 GHz. Its nominal 50 μm I-region width, bined with the typical 1.55 μs carrier lifetime, result in a diode with low forward resistance and low distortion characteristics. Feature list - Low signal distortion, charge carrier lifetime trr = 1.55 µs (typical) - Very low capacitance C = 0.2 p F (typical) at voltage VR = 0 and frequencies f ≥ 1 GHz - Low forward resistance RF = 2.7 Ω (typical) at forward current IF = 10 m A and frequency f = 100 MHz - Industry standard SOD323 package (2.5 mm x 1.25 mm x 0.9 mm) - Pb-free, Ro HS pliant and halogen-free Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Optimized for low bias current RF and high-speed interface switches and attenuators - Wireless munication - High speed data networks Device information Table 1 Part information Product name / Ordering code BAR64-03W / BAR6403WE6327HTSA1 Package SOD323 Configuration Single, with leads Marking Pieces / Reel blue 2 3k Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions! .infineon. Please read the Important Notice and Warnings at the end of this document v1.0 2018-06-30 Low signal distortion, surface mount RF PIN diode Table of contents Table of contents Product description - - - - - - - - - - - - - . . . 1 Feature list - - - - - - -...