BAR64-02- Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz)
BAR64-02W- Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz)
BAR64-04- Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz)
BAR64-04W- Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz)
BAR64-05- Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz)
BAR64-05W- Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz)
BAR64-06- Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz)
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BAR 64-03W
Silicon PIN Diode
l High voltage current controlled RF resistor for RF attenuator and swirches l Freqency range above 1 MHz l Low resistance and short carrier lifetime l For frequencies up to 3 GHz
Type BAR 64-03W Marking 2 Ordering Code (tape and reel) Q62702-A1045 Pin Configuration Package 1 2 C A SOD-323
1)
Maximum Ratings per Diode Parameter Reverse voltage Forward current Total Power dissipation TS ≤ 25°C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-ambient
1)
Symbol
BAR 64-03W 200 100 250 150 -55 +150°C -55...+150°C
Unit V mA mW °C °C °C
VR IF Ptot Tj Top Tstg
Rth JA
≤ 450
K/W
_________________________
1)Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group
1
Edition A01, 22.07.