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BSM191 - IGBT

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Part number BSM191
Manufacturer Siemens Semiconductor Group
File Size 223.47 KB
Description IGBT
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SIMOPAC® Module BSM 191 VDS = 1000 V ID = 28 A R DS(on) = 0.37 Ω q q q q q q Power module Single switch N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circuit diagram: 1 Type BSM 191 Maximum Ratings Parameter Drain-source voltage Ordering Code C67076-A1009-A2 Symbol Values 1000 1000 ± 20 28 112 – 55 … + 150 700 ≤ 0.18 2500 16 11 F 55/150/56 Unit V VDS VDGR VGS ID ID puls Tj, Tstg Ptot Rth JC Vis – – – – Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 25 ˚C Pulsed drain current, TC = 25 ˚C Operating and storage temperature range Power dissipation, TC = 25 ˚C Thermal resistance Chip-case Insulation test voltage2), t = 1 min.
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