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BSM191F - IGBT

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Part number BSM191F
Manufacturer Siemens Semiconductor Group
File Size 205.71 KB
Description IGBT
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SIMOPAC® Module BSM 191 F VDS = 1000 V ID = 28 A R DS(on) = 0.42 Ω q q q q q q q Power module Single switch FREDFET N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circuit diagram: 1 Type BSM 191 F Maximum Ratings Parameter Drain-source voltage Ordering Code C67076-A1053-A2 Symbol Values 1000 1000 ± 20 28 110 – 55 … + 150 700 ≤ 0.18 2500 16 11 F 55/150/56 Unit V VDS VDGR VGS TC = 25 ˚C TC = 25 ˚C ID ID puls Tj, Tstg Ptot Rth JC 2) Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, Pulsed drain current, Power dissipation, TC = 25 ˚C Thermal resistance Chip-case Insulation test voltage , t = 1 min.
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