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BSM300GA170DN2 E3166
IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • RG on,min = 5.6 Ohm Type BSM300GA170DN2 E3166 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V
VCE
IC
Package SINGLE SWITCH 1
Ordering Code C67070-A2710-A67
1700V 440A
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 440 300
TC = 25 °C TC = 80 °C
Pulsed collector current, tp = 1 ms
ICpuls
880 600
TC = 25 °C TC = 80 °C
Power dissipation per IGBT
Ptot
2500
W + 150 -55 ... + 150 ≤ 0.05 ≤ 0.
BSM300GA170DN2E3166 Datasheet
