BSM300GA170DN2E3166 Datasheet | Siemens Semiconductor Group

BSM300GA170DN2 E3166 IGBT Power Module Preliminary data - Half-bridge - Including fast free-wheeling diodes - Enlarged diode area - Package with insulated metal base plate - RG on,min = 5.6 Ohm Type BSM300GA170DN2 E3166 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V Package SINGLE SWITCH 1 Ordering Code C67070-A2710-A67 1700V 440A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 440 300 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 880 600 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot W + 150 -55 ... + 150 ≤ 0.05 ≤ 0.1 4000 20 11 F 55 / 150 / 56 Vac mm...