BSM300GA170DN2E3166 Description
Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. Tj ≤ 150 °C 2600 W 2200 Safe operating area IC = ƒ(VCE) parameter:.
BSM300GA170DN2E3166 is IGBT manufactured by Siemens Semiconductor Group.
| Part Number | Description |
|---|---|
| BSM300GA120DN2E3166 | IGBT |
| BSM35GB120DN2 | IGBT |
| BSM35GD120D2 | IGBT |
| BSM100GAL120DN2 | IGBT |
| BSM100GB120DN2 | IGBT |
Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. Tj ≤ 150 °C 2600 W 2200 Safe operating area IC = ƒ(VCE) parameter:.