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BSM 35 GB 120 DN2
IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Doubled diode area • Package with insulated metal base plate Type BSM 35 GB 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V
VCE
IC
Package HALF-BRIDGE 1
Ordering Code C67070-A2111-A70
1200V 50A
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 50 35
TC = 25 °C TC = 80 °C
Pulsed collector current, tp = 1 ms
ICpuls
100 70
TC = 25 °C TC = 80 °C
Power dissipation per IGBT
Ptot
280
W + 150 -55 ... + 150 ≤ 0.44 ≤ 0.
BSM35GB120DN2 Datasheet
