BSM75GB120DN2 Description
Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. Tj ≤ 150 °C 650 W 550 Safe operating area IC = ƒ(VCE) parameter:.
| Part number | BSM75GB120DN2 |
|---|---|
| Download | BSM75GB120DN2 Datasheet (PDF) |
| File Size | 112.89 KB |
| Manufacturer | Siemens Semiconductor Group |
| Description | IGBT |
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| Part Number | Description |
|---|---|
| BSM75GB170DN2 | IGBT |
| BSM75GAL120DN2 | IGBT |
| BSM75GD120DN2 | IGBT |
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| BSM100GB120DN2 | IGBT |
Static Characteristics Gate threshold voltage Values typ. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. Tj ≤ 150 °C 650 W 550 Safe operating area IC = ƒ(VCE) parameter:.