• Part: BSM75GB170DN2
  • Description: IGBT
  • Manufacturer: Siemens Semiconductor Group
  • Size: 113.21 KB
Download BSM75GB170DN2 Datasheet PDF
BSM75GB170DN2 page 2
Page 2
BSM75GB170DN2 page 3
Page 3

Datasheet Summary

BSM 75 GB 170 DN2 IGBT Power Module Preliminary data - Half-bridge - Including fast free-wheeling diodes - Package with insulated metal base plate - RG on,min = 22 Ohm Type BSM 75 GB 170 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V Package HALF-BRIDGE 1 Ordering Code C67070-A2702-A67 1700V 110A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 110 75 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 220 150 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot W + 150 -55 ... + 150 ≤ 0.2 ≤ 0.63 4000 16 11 F 55 / 150 / 56 Vac mm K/W °C TC = 25 °C Chip...