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BSM 75 GB 170 DN2
IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 22 Ohm Type BSM 75 GB 170 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V
VCE
IC
Package HALF-BRIDGE 1
Ordering Code C67070-A2702-A67
1700V 110A
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 110 75
TC = 25 °C TC = 80 °C
Pulsed collector current, tp = 1 ms
ICpuls
220 150
TC = 25 °C TC = 80 °C
Power dissipation per IGBT
Ptot
625
W + 150 -55 ... + 150 ≤ 0.2 ≤ 0.
BSM75GB170DN2 Datasheet
