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BSM75GD120DN2 - IGBT

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Part number BSM75GD120DN2
Manufacturer Siemens Semiconductor Group
File Size 185.90 KB
Description IGBT
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BSM 75 GD 120 DN2 IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 75 GD 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V VCE IC Package ECONOPACK 3 Ordering Code C67070-A2516-A67 1200V 103A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 103 75 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 206 150 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot 520 W + 150 -55 ... + 150 ≤ 0.235 ≤ 0.
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