BSP315
BSP 315
SIPMOS ® Small-Signal Transistor
- P channel
- Enhancement mode
- Logic Level
- VGS(th) = -0 -2.0 V
Pin 1 G Type BSP 315 Type BSP 315 BSP 315 Pin 2 D Pin 3 S Pin 4 D
-50 V
-1.1 A
RDS(on)
0.8 Ω
Package SOT-223
Marking BSP 315
Ordering Code Q67000-S75 Q67000-S249
Tape and Reel Information E6327 E6433
Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values -50 -50 Unit V
VDS VDGR VGS ID
RGS = 20 kΩ
Gate source voltage Continuous drain current
± 20 A -1.1
TA = 39 °C
DC drain current, pulsed
IDpuls
-4.4
TA = 25 °C
Power dissipation
Ptot
TA = 25 °C
Semiconductor Group
Sep-12-1996
BSP 315
Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 70 ≤ 10 E 55 / 150 / 56 K/W Unit °C
Tj Tstg Rth JA Rth...
