BUP200 Datasheet | Siemens Semiconductor Group

BUP 200 IGBT Preliminary data - Low forward voltage drop - High switching speed - Low tail current - Latch-up free - Avalanche rated Pin 1 G Type BUP 200 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code Q67078-A4400-A2 Pin 3 E Package TO-220 AB 1200V 3.6A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 3.6 2.4 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 7.2 4.8 TC = 25 °C TC = 90 °C Avalanche energy, single pulse 3.5 m J IC = 1.5 A, VCC = 50 V, RGE = 25 Ω L = 3.3 m H, Tj = 25 °C Power dissipation Ptot W -55 ... + 150 -55 ... + 150 °C TC = 25 °C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group Dec-06-1995 BUP 200 Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance IGBT thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - Rth JC ≤ 3.1 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max....