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BUP200D - IGBT

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Part number BUP200D
Manufacturer Siemens Semiconductor Group
File Size 325.09 KB
Description IGBT
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BUP 200 D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 G Pin 2 C Pin 3 E Type BUP 200 D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE IC Package TO-220 AB Ordering Code Q67040-A4420-A2 1200V 3.6A Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 3.6 2.4 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 7.2 4.8 TC = 25 °C TC = 90 °C Diode forward current IF 8 TC = 90 °C Pulsed diode current, tp = 1 ms IFpuls 48 TC = 25 °C Power dissipation Ptot 50 W -55 ... + 150 -55 ...
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