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BUP213 - IGBT

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Part number BUP213
Manufacturer Siemens Semiconductor Group
File Size 110.33 KB
Description IGBT
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BUP 213 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 G Type BUP 213 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code Q67040-A4407-A2 Pin 3 E VCE IC Package TO-220 AB 1200V 32A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 32 20 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 64 40 TC = 25 °C TC = 90 °C Avalanche energy, single pulse EAS 22 mJ IC = 15 A, VCC = 50 V, RGE = 25 Ω L = 200 µH, Tj = 25 °C Power dissipation Ptot 200 W -55 ... + 150 -55 ...
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