BUP213 Datasheet | Siemens Semiconductor Group

BUP 213 IGBT Preliminary data - Low forward voltage drop - High switching speed - Low tail current - Latch-up free - Avalanche rated Pin 1 G Type BUP 213 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code Q67040-A4407-A2 Pin 3 E Package TO-220 AB 1200V 32A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 32 20 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 64 40 TC = 25 °C TC = 90 °C Avalanche energy, single pulse 22 m J IC = 15 A, VCC = 50 V, RGE = 25 Ω L = 200 µH, Tj = 25 °C Power dissipation Ptot W -55 ... + 150 -55 ... + 150 °C TC = 25 °C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group Nov-30-1995 BUP 213 Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance IGBT thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - Rth JC ≤ 0.63 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max....