• Part: BUZ104SL-4
  • Description: Power Transistor
  • Category: Transistor
  • Manufacturer: Siemens Semiconductor Group
  • Size: 90.31 KB
Download BUZ104SL-4 Datasheet PDF
Siemens Semiconductor Group
BUZ104SL-4
BUZ104SL-4 is Power Transistor manufactured by Siemens Semiconductor Group.
Preliminary data BUZ 104SL-4 SIPMOS ® Power Transistor - Quad-channel - Enhancement mode - Logic level - Avalanche-rated - dv/dt rated Type BUZ 104SL-4 55 V 3.2 A RDS(on) 0.125 Ω Package P-DSO-28 Ordering Code C67078-S. . . .- . . Maximum Ratings Parameter Continuous drain current one channel active Symbol Values 3.2 Unit A ID IDpuls TA = 25 °C Pulsed drain current one channel active TA = 25 °C Avalanche energy, single pulse 52 dv/dt 6 m J ID = 3.2 A, VDD = 25 V, RGS = 25 Ω L = 10.15 m H, Tj = 25 °C Reverse diode dv/dt k V/µs IS = 3.2 A, VDS = 40 V, di F/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Power dissipation ,one channel active VGS Ptot ± 14 2.4 TA = 25 °C Operating temperature Storage temperature IEC climatic category, DIN IEC 68-1 Tj Tstg -55 ... + 175 -55 ... + 175 55 / 175 / 56 °C Semiconductor...