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BUZ104SL-4 - Power Transistor

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Preliminary data BUZ 104SL-4 SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type BUZ 104SL-4 VDS 55 V ID 3.2 A RDS(on) 0.125 Ω Package P-DSO-28 Ordering Code C67078-S. . . .- . . Maximum Ratings Parameter Continuous drain current one channel active Symbol Values 3.2 Unit A ID IDpuls 12.8 TA = 25 °C Pulsed drain current one channel active TA = 25 °C Avalanche energy, single pulse EAS 52 dv/dt 6 mJ ID = 3.2 A, VDD = 25 V, RGS = 25 Ω L = 10.15 mH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 3.2 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Power dissipation ,one channel active VGS Ptot ± 14 2.