BUZ104 Datasheet | Siemens Semiconductor Group

BUZ 104 SIPMOS ® Power Transistor - N channel - Enhancement mode - Avalanche-rated - dv/dt rated - Low on-resistance - 175°C operating temperature - also in TO-220 SMD available Pin 1 G Type BUZ 104 Pin 2 D Pin 3 S 50 V 17.5 A RDS(on) 0.1 Ω Package TO-220 AB Ordering Code C67078-S1353-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 17.5 Unit A ID IDpuls TC = 29 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse 35 dv/dt 6 m J ID = 17.5 A, VDD = 25 V, RGS = 25 Ω L = 114 µH, Tj = 25 °C Reverse diode dv/dt k V/µs IS = 17.5 A, VDS = 40 V, di F/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Power dissipation VGS Ptot ± 20 60 TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg Rth JC Rth JA -55 ... + 175 -55 ... + 175 ≤ 2.5 ≤ 75 E 55 / 175 / 56 °C K/W Semiconductor...