BUZ104 Datasheet and Specifications PDF

BUZ 104 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 G Type BUZ 104 .

96 BUZ 104 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 3 0.1 1 10 10 0.07 4 1 100 100 100 V VGS = 0 V, ID, Tj = -40 °C Gate threshold voltage VGS(th) 2.1 VGS.

isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.1Ω(Max) ·Ultra low on-resistance ·Fast Switching ·175℃ operating temperature ·Minimum Lot-to-Lot variations .

*Static Drain-Source On-Resistance : RDS(on) = 0.1Ω(Max)
*Ultra low on-resistance
*Fast Switching
*175℃ operating temperature
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*High current , high speed switching
*Solenoid and relay drivers
*DC-DC & DC-.