BUZ104L
BUZ104L is Power Transistor manufactured by Siemens Semiconductor Group.
BUZ 104L
SIPMOS ® Power Transistor
- N channel
- Enhancement mode
- Avalanche-rated
- Logic Level
- dv/dt rated
- Low on-resistance
- 175 °C operating temperature
- also in TO-220 SMD available Pin 1 G Pin 2 D Pin 3 S
Type BUZ 104L
50 V
17.5 A
RDS(on)
0.1 Ω
Package TO-220 AB
Ordering Code C67078-S1358-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 17.5 Unit A
ID IDpuls
TC = 29 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
35 dv/dt 6 m J
ID = 17.5 A, VDD = 25 V, RGS = 25 Ω L = 114 µH, Tj = 25 °C
Reverse diode dv/dt k V/µs
IS = 17.5 A, VDS = 40 V, di F/dt = 200 A/µs Tjmax = 175 °C
Gate source voltage Gate-source peak voltage,aperiodic Power dissipation
VGS Vgs Ptot
± 14 ± 20
TC = 25 °C
Semiconductor...
