BUZ10L Description
Static Characteristics Drain- source breakdown voltage Values typ. Dynamic Characteristics Transconductance Values typ. Reverse Diode Inverse diode continuous forward current IS A 1.5 60 0.1 23 92 V 1.9 ns µC Values typ.
BUZ10L is Power Transistor manufactured by Siemens Semiconductor Group.
| Manufacturer | Part Number | Description |
|---|---|---|
STMicroelectronics |
BUZ10 | N-Channel Power MOSFET |
Inchange Semiconductor |
BUZ10 | N-Channel MOSFET |
Inchange Semiconductor |
BUZ100 | N-Channel MOSFET |
Siemens Semiconductor Group |
BUZ101 | Power Transistor |
| BUZ101 | N-Channel MOSFET Transistor |
Static Characteristics Drain- source breakdown voltage Values typ. Dynamic Characteristics Transconductance Values typ. Reverse Diode Inverse diode continuous forward current IS A 1.5 60 0.1 23 92 V 1.9 ns µC Values typ.