BUZ10S2
BUZ10S2 is Power Transistor manufactured by Siemens Semiconductor Group.
BUZ 10 S2
Not for new design
SIPMOS ® Power Transistor
- N channel
- Enhancement mode
- Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 10 S2
60 V
23 A
RDS(on)
0.07 Ω
Package TO-220 AB
Ordering Code C67078-S1300-A7
Maximum Ratings Parameter Continuous drain current Symbol Values 23 Unit A
ID IDpuls
TC = 26 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
23 1.3 m J
ID = 23 A, VDD = 25 V, RGS = 25 Ω L = 15.1 µH, Tj = 25 °C
Gate source voltage Power dissipation 8
VGS Ptot
± 20 75
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1
Tj Tstg Rth JC Rth JA
-55 ... + 150 -55 ... + 150 ≤ 1.67 ≤ 75 E 55 / 150 / 56
°C K/W
Semiconductor Group
07/96
BUZ 10...
