BUZ10S2 Description
Static Characteristics Drain- source breakdown voltage Values typ. Dynamic Characteristics Transconductance Values typ. Reverse Diode Inverse diode continuous forward current IS A 1.5 60 0.1 23 92 V 1.9 ns µC Values typ.
BUZ10S2 is Power Transistor manufactured by Siemens Semiconductor Group.
| Part Number | Description |
|---|---|
| BUZ10 | Power Transistor |
| BUZ100 | Power Transistor |
| BUZ100L | Power Transistor |
| BUZ100S | Power Transistor |
| BUZ100SL | Power Transistor |
Static Characteristics Drain- source breakdown voltage Values typ. Dynamic Characteristics Transconductance Values typ. Reverse Diode Inverse diode continuous forward current IS A 1.5 60 0.1 23 92 V 1.9 ns µC Values typ.