Q62702-A1030
Q62702-A1030 is Silicon Switching Diode Array (For high speed switching applications Common cathode) manufactured by Siemens Semiconductor Group.
BAV 70W Silicon Switching Diode Array
- For high speed switching applications
- mon cathode
Type BAV 70W
Marking Ordering Code A4s Q62702-A1030
Pin Configuration 1 = A1 2 = A2
Package 3 = C1/C2 SOT-323
Maximum Ratings per Diode Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total Power dissipation Symbol Values 70 70 200 4.5 250 m A A m W 150
- 65 ... + 150 ≤ 460 ≤ 190 °C Unit V
VR VRM IF IFS Ptot Tj Tstg Rth JA Rth JS
TS = 103 °C
Junction temperature Storage temperature Thermal Resistance Junction ambient
1)
K/W
Junction
- soldering point
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu
Semiconductor Group
Nov-28-1996
BAV 70W
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics per Diode Breakdown voltage Values typ. max. Unit
V(BR)
- V m V 715 855 1000 1250 µA 2.5 30 50
I(BR) = 100 µA
Forward voltage
IF = 1 m A IF = 10 m A IF = 50 m A IF = 150 m A
Reverse current
VR = 70 V, TA = 25 °C VR = 25 V, TA = 150 °C VR = 70 V, TA = 150 °C
AC characteristics per Diode Diode capacitance
1.5 p F ns...
