Q62702-A1039 Datasheet | Siemens Semiconductor Group

BAR 63... Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 Marking G3 G4 G5 G6 Ordering code (tape and reel) Q62702-A1036 Q62702-A1037 Q62702-A1038 Q62702-A1039 Pin configuration Package 1 2 3 A C SOT-23 A C C/A A A C/C C C A/A 1) Maximum ratings Parameter Reverse voltage Forward current Total Power dissipation TS ≤ 80°C BAR 63-04,-05,-06 TS ≤ 55°C Operating temperature range Storage temperature range Thermal resistance Junction-ambient BAR63 BAR 63-04,-05,-06 1) Symbol BAR 63 50 100 250 250 -55 +150°C -55...+150°C Unit V m A m W °C °C VR IF Ptot Top Tstg Rth JA ≤ 450 ≤ 540 K/W Junction-soldering point BAR64 BAR63-04,-05,-06 Rth JS ≤ 280 ≤ 380 1)Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Edition A01, 23.02.95 BAR 63... Electrical characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. Value typ. max. Unit DC characteristics Breakdown voltage IR = 5 µA Reverse leakage VR = 20 V Forward voltage IF = 100 m A Diode capacitance VR = 0 V, f = 100 MHz Diode capacitance VR = 5 V, f = 1 MHz Forward resistance IF = 5 m A, f = 100 MHz IF = 10 m A, f = 100 MHz Charge carrier lifetime IF = 10 m A, IR = 6 m A, IR = 3 m A Series inductance Forward current IF = f (TA- TS) BAR63 V(BR) 50 0.95 0.3 0.21 1.2 1 75 1.4 - V n A 50 V 1.2 p F p F 0.3 Ω 2 ns n...