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Q62702-A1037 Datasheet

Manufacturer: Siemens Semiconductor Group (now Infineon)

Q62702-A1037 datasheet preview

Datasheet Details

Part number	Q62702-A1037
Datasheet	Q62702-A1037_SiemensSemiconductorGroup.pdf
File Size	80.64 KB
Manufacturer	Siemens Semiconductor Group (now Infineon)
Description	Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)

Q62702-A1037 Overview

at TA = 25 °C, unless otherwise specified. Semiconductor Group 4 Edition A01, 23.02.95.

Q62702-A1037 Key Features

PIN diode for high speed switching of RF signals
Low forward resistance
Very low capacitance

More Datasheets from Siemens Semiconductor Group (now Infineon)

See all Siemens Semiconductor Group (now Infineon) datasheets

Part Number	Description
Q62702-A1030	Silicon Switching Diode Array (For high speed switching applications Common cathode)
Q62702-A1031	Silicon Switching Diode Array (For high speed switching applications Common anode)
Q62702-A1036	Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
Q62702-A1038	Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
Q62702-A1039	Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
Q62702-A1004	Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies)
Q62702-A1006	Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators)
Q62702-A1010	Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz)
Q62702-A1017	Silicon Dual Schottky Diode (High barrier diode for balanced mixers/ phase detectors and modulators)
Q62702-A1025	Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)

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