| Part number | Q62702-A608 |
|---|---|
| Datasheet | Q62702-A608_SiemensSemiconductorGroup.pdf |
| File Size | 37.30 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Silicon PIN Diode |
|
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Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group 1 07.94 BA 885 at TA = 25 ˚C, unless otherwise specified. VF IR CT rf gp LS 22 5 70 2 40 7 µS nH 0.28 0.23 0.6 0.4 Ω Values typ.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| Q62702-A66 | Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Low barrier type) |
| Q62702-A687 | Silicon Switching Diode (For high-speed switching) |
| Q62702-A688 | Silicon Switching Diode Array (For high-speed switching applications Common anode) |
| Q62702-A693 | Silicon Switching Diode Array (For high-speed switching Common cathode) |
| Q62702-A0042 | Silicon Crossover Ring Quad Schottky Diode |
| Q62702-A0043 | Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers/ phase detectors and modulators) |
| Q62702-A0062 | Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type) |
| Q62702-A0960 | Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) |
| Q62702-A1004 | Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) |
| Q62702-A1006 | Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators) |
