Q62702-B592 Datasheet | Siemens Semiconductor Group

BB 831 Silicon Variable Capacitance Diode Preliminary data - Frequency range up to 2 GHz special design for use in TV-sat indoor units Type BB 831 Marking white T Ordering Code Q62702-B592 Pin Configuration 1=C 2=A Package SOD-323 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R ≥ 5kΩ ) Forward current Operating temperature range Storage temperature Symbol VR VRM IF Top Tstg Value 30 35 20 -55 ...+125 -55 ...+150 m A °C Unit V Semiconductor Group Aug-03-1998 BB 831 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Reverse current VR = 30 V Reverse current VR = 30 V, TA = 85 °C IR 500 IR 20 n A Symbol min. Values typ. max. Unit AC characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching VR = 1 V, VR = 28 V, f = 1 MHz Series resistance VR = 1 V, f = 100 MHz Series inductance Ls 1.8 n H rs 1 Ω CT1 /CT28 ∆CT /CT CT 7.8 0.85 7.8 8.8 1.02 8.6 9.8 1.2 9.5 3 % p F 1) In-line matching. For details please refer to Application Note 047 Semiconductor Group Aug-03-1998 BB 831 Diode capacitance CT = f (VR ) f = 1MHz Semiconductor Group Aug-03-1998...