Q62702-B599 Datasheet | Siemens Semiconductor Group

BBY 52 Silicon Tuning Diode - High Q hyperabrupt dual tuning diode - Designed for low tuning voltage operation - For VCO's in mobile munications equipment Type BBY 52 Marking Ordering Code S5s Q62702-B599 Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT-23 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 7 20 - 55 ... + 150 - 55 ... + 150 Unit V m A °C VR IF Top Tstg Semiconductor Group Jul-04-1996 BBY 52 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit 10 200 n A VR = 6 V, TA = 25 °C VR = 6 V, TA = 65 °C AC characteristics Diode capacitance 1.4 0.85 1.85 1.5 1.35 1.15 1.6 0.9 0.12 2 2.2 1.45 p F VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/CT4 1.1 2.1 Ω 1.8 p F n H - VR = 1 V, VR = 4 V, f = 1 MHz Series resistance rs CC Ls VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to...