BA592 Datasheet PDF

MAXIMUM RATINGS

Parameter Reverse voltage Forward current Operating temperature range Storage temperature range Thermal Resistance Junction - ambient Rth JA ≤ Symbol VR IF Top Tstg Values 35 100 – 55 … + 150 Unit V mA – 55 … + 125 ˚C 450 K/W Semiconductor Group 1 10.94 BA 592

ELECTRICAL CHARACTERISTICS

at TA = 25 ˚C, unless otherwise specified. Parameter Forward voltage IF = 100 mA Reverse current VR = 20 V Diode capacitance f = 1 MHz VR = 1 V VR = 3 V Forward resistance f = 100 MHz IF = 3 mA IF = 10 mA Reverse resistance VR = 1 V, f = 100 MHz Series inductance Symbol min. VF IR CT – 0.6 rf – – 1/gp LS – – 0.45 0.36 100 2 0.7 0.5 – – KΩ nH 0.92 0.85 1.4 1.1 Ω – – Values typ. – – max. 1 20 V nA pF Unit Diode capacitance CT = f (VR) f = 1 MHz Forward resistance rf = f (IF) f = 100 MHz Semiconductor Group 2