Siemens BAR81
Silicon RF Switching Diode
| Part No. | BAR81 |
|---|---|
| Datasheet | BAR81 Download |
| Manufacturer |  Siemens |
| Description | Silicon RF Switching Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 30 100 - 55 ... + 125 - 55 ... + 150 Unit V mA °C VR IF Top Tstg Semiconductor Group 1 Feb-26-1996 BAR 81ELECTRICAL CHARACTERISTICS
at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 0.93 20 nA V 1 VR = 20 V, TA = 25 °C Forward voltage VF IF = 100 mA AC characteristics Diode capacitance CT 0.6 0.57 0.7 0.15 - pF VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Forward resistance rf - Ω nH IF = 5 mA, f = 100 MHz Series inductance chip to ground Ls Semiconductor Group 2 Feb-26-1996 BAR 81 Configuration of the shunt-diode - A perfect ground is essential for optimum isolation - The anode pins should be used as passage for RF Package Semiconductor Group 3 Feb-26-1996
