BAR81 Datasheet | Kexin Semiconductor

SMD Type Silicon RF Switching Diodes BAR81 Diodes Features Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss Unit: mm Absolute M axim um Ratings Ta = 25 Param eter Diode reverse voltage Forward current Junction tem perature Operating tem perature range Storage tem perature Sym bol VR IF Tj Top T stg V a lu e 30 100 150 -55 to +125 -55 to +150 U n it V mA Electrical Characteristics Ta = 25 Parameter Symbol Conditions Min Typ Max Unit Reverse current VR = 20 V 20 nA Forward voltage IF = 100 mA Diode capacitance VR = 1 V, f = 1 MHz CT VR = 3 V, f = 1 MHz 0.6 pF Forward resistance...