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BAR81W - Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)

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Part number BAR81W
Manufacturer Siemens Semiconductor Group
File Size 30.65 KB
Description Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)
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BAR 81W Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss 3 4 2 1 VPS05605 Type BAR 81W Marking Ordering Code BBs Q62702-A1270 Pin Configuration Package 1 = A1 2 = C2 3 = A2 4 = C1 SOT-343 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S = 138 °C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient 1) Symbol Value 30 100 100 150 -55 ...+125 -55 ...+150 Unit V mA mW °C °C VR IF Ptot Tj Top Tstg RthJA RthJS ≤ 200 ≤ 120 K/W Junction - soldering point 1) Package mounted on alumina 15mm x 16.7mm x 0.
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