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BAR 81W
Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss
3 4
2 1
VPS05605
Type BAR 81W
Marking Ordering Code BBs Q62702-A1270
Pin Configuration
Package
1 = A1 2 = C2 3 = A2 4 = C1 SOT-343
Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S = 138 °C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient
1)
Symbol
Value 30 100 100 150 -55 ...+125 -55 ...+150
Unit V mA mW °C °C
VR IF Ptot Tj Top Tstg
RthJA RthJS
≤ 200 ≤ 120
K/W
Junction - soldering point
1) Package mounted on alumina 15mm x 16.7mm x 0.
BAR81W Datasheet
